MBR10120FP Key Features
- 175℃ operating junction temperature
- Low VF and low IR type
- Metal silicon junction, major carrier conduction
- 10A total (5A per diode leg)
- Guardring for over voltage protection
- Low power loss, high efficiency
- High surge capability
- Insulating package, insulating voltage=2000V DC, capacitance=45pF
- High temperature soldering guaranteed : 260℃/10s, 0.25”(6.35mm) from case
- For use in low voltage, high frequency inverters, free wheeling, and polarity protection application
