The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10120
FEATURES ·Low Reverse Current ·Low Stored Charge, Majority Carrier Conduction
·Low Power Loss/High Efficiency ·Highly Stable Oxide Passivated Junction ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High Frequency switch power Supply ·Free wheeling diodes and polarity protection applicationsds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
VRMS
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Maximum RMS Reverse Voltage
VALUE UNIT 120 V 70 V
IF(AV) IFSM TJ
Average Rectified Forward Current
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz)
10 110
A A
Junction Temperature
MBR10120 Datasheet
