CYStech Electronics MTB010N06I3
N-Channel Enhancement Mode Power MOSFET
| Part No. | MTB010N06I3 |
|---|---|
| Datasheet | MTB010N06I3 Download |
| Manufacturer |  CYStech Electronics |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low On Resistance● Simple Drive Requirement
● Low Gate Charge
● Fast Switching Characteristic
● Pb-free lead plating and halogen-free package Symbol MTB010N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB010N06I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA: 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTB010N06I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C137I3 Issued Date : 2015.05.05 Revised Date : Page No. : 2/ 8
ABSOLUTE MAXIMUM RATINGS
(TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 4) Continuous Drain Current @TA=70°C, V...
