Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C137I3 Issued Date : 2015.05.05 Revised Date : Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
BVDSS ID@VGS=10V, TC=25°C
60V 50A
RDS(ON)@VGS=10V, ID=30A 9.8 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=15A 12.8 mΩ(typ)
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- Pb-free lead plating and halogen-free package
Symbol
Outline
TO-251
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB010N06I3-0-UA-G
TO-251 (Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS pliant...