MTB010N06I3 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: CYStech Electronics

Overview: CYStech Electronics Corp. Spec. No. : C137I3 Issued Date : 2015.05.05 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB010N06I3 BVDSS ID@VGS=10V, TC=25°C 60V 50A RDS(ON)@VGS=10V, ID=30A 9.8 mΩ(typ) RDS(ON)@VGS=4.5V, ID=15A 12.

Datasheet Details

Part number	MTB010N06I3
Manufacturer	CYStech Electronics
File Size	303.28 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB010N06I3-CYStechElectronics.pdf

Key Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and halogen-free package Symbol MTB010N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB010N06I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green com.

MTB010N06I3 Distributor & Price

Compare MTB010N06I3 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from CYStech Electronics

Part Number	Description
MTB013N10RH8	N-Channel Enhancement Mode Power MOSFET
MTB013N10RQ8	N-Channel Enhancement Mode Power MOSFET
MTB015N10RI3	N-Channel Enhancement Mode Power MOSFET
MTB030N04N3	N-Channel Enhancement Mode Power MOSFET
MTB030N10RE3	N-Channel Enhancement Mode Power MOSFET
MTB030P06KH8	P-Channel Enhancement Mode Power MOSFET
MTB032P06V8	P-Channel Enhancement Mode Power MOSFET
MTB035N10KRJ3	N-Channel Enhancement Mode Power MOSFET
MTB03N03H8	N-Channel Enhancement Mode Power MOSFET
MTB040P04Q8	P-Channel Enhancement Mode Power MOSFET