Datasheet Summary
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C016J3 Issued Date : 2018.05.24 Revised Date : Page No. : 1/ 8
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
60V 43A 10.7 mΩ(typ) 16.9 mΩ(typ)
Symbol
Outline
TO-251
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB010N06RI3-0-UA-G
TO-251 (Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS pliant...