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MTB010N06RI3 - N-Channel MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 43A 10.7 mΩ(typ) 16.9 mΩ(typ) Symbol MTB010N06RI3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB010N06RI3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box E.

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Datasheet Details

Part number MTB010N06RI3
Manufacturer CYStech
File Size 599.54 KB
Description N-Channel MOSFET
Datasheet download datasheet MTB010N06RI3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB010N06RI3 Spec. No. : C016J3 Issued Date : 2018.05.24 Revised Date : Page No. : 1/ 8 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 43A 10.7 mΩ(typ) 16.