MTC3586DFA6
MTC3586DFA6 is P- & N-Channel Enhancement Mode Power MOSFET manufactured by CYStech Electronics.
CYStech Electronics Corp.
Spec. No. : C835DFA6 Issued Date : 2013.06.03 Revised Date : 2013.10.30 Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
N-CH
BVDSS
20V
ID 5A(VGS=4.5V)
27mΩ(VGS=4.5V)
P-CH -20V -3.3A(VGS=-4.5 V)
78mΩ(VGS=-4.5V)
Description
RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V)
The MTC3586DFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2- 2-6L package, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2- 2-6L package is universally preferred for all mercial-industrial surface mount applications.
Features
- Simple drive requirement
- Low gate charge
- Low on-resistance
- Fast switching speed
- Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
DFN2×2-6L
G：Gate S：Source D：Drain
Ordering Information
Device
Package
MTC358...
