Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C835DFA6 Issued Date : 2015.11.02 Revised Date : Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
N-CH
BVDSS
20V
P-CH -20V
5A(VGS=4.5V)
-3.3A(VGS=-4.5 V)
27mΩ(VGS=4.5V) 78mΩ(VGS=-4.5V)
Description
RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V)
The MTC3586BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
DFN2- 2-6L package, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DFN2- 2-6L package is universally preferred for all mercial-industrial surface mount...