MTN4N60E3 - N-Channel Enhancement Mode Power MOSFET

CYStech Electronics

General Description

The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package.

📥 Download Datasheet

MTN4N60E3 n-channel enhancement mode power mosfet by CYStech Electronics - Datasheet Preview

Datasheet Details

Part number	MTN4N60E3
Manufacturer	CYStech Electronics
File Size	274.10 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTN4N60E3 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MTN4N60BE3	N-Channel Enhancement Mode Power MOSFET	CYStech
MTN4N60BFP	N-Channel Enhancement Mode Power MOSFET	CYStech
MTN4N60BI3	N-Channel Enhancement Mode Power MOSFET	CYStech
MTN4N60BJ3	N-Channel Enhancement Mode Power MOSFET	CYStech
MTN4N60CFP	N-Channel Enhancement Mode Power MOSFET	CYStech

Other Datasheets by CYStech Electronics

Part Number	Description
MTN4N65CE3	N-Channel Enhancement Mode Power MOSFET
MTN4800V8	N-Channel Logic Level Enhancement Mode Power MOSFET
MTN2N65BJ3	N-Channel Enhancement Mode Power MOSFET
MTN6515E3	N-Channel Logic Level Enhancement Mode Power MOSFET
MTN6515H8	N-Channel Logic Level Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

CYStech Electronics Corp. Spec. No. : C408E3 Issued Date : 2010.12.06 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN4N60E3 BVDSS : 600V RDS(ON) : 2.1Ω(typ.) ID : 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.