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CYStech Electronics Corp.
N -Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C739E3 Issued Date : 2009.10.19 Revised Date : 2010.10.18 Page No. : 1/6
MTN6515E3
Features
• Low Gate Charge • Simple Drive Requirement • Pb-free lead plating
BVDSS ID RDSON(MAX)
150V 20A 65mΩ
Equivalent Circuit
MTN6515E3
Outline
TO-220
G：Gate D：Drain S：Source G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range
Note : *1.
MTN6515E3 Datasheet
