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MTN6515J3 - N-Channel Logic Level Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating and halogen-free package BVDSS 150V ID RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=5V, ID=10A RDS(ON)@VGS=3V, ID=3A 20A 60mΩ(typ) 59mΩ(typ) 60mΩ(typ) Equivalent Circuit MTN6515J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Sy mbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous D.

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Datasheet Details

Part number MTN6515J3
Manufacturer CYStech Electronics
File Size 353.05 KB
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet download datasheet MTN6515J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N -Channel Logic Level Enhancement Mode Power MOSFET Spec. No. : C739J3 Issued Date : 2009.10.19 Revised Date : 2013.12.25 Page No. : 1/9 MTN6515J3 Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package BVDSS 150V ID RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=5V, ID=10A RDS(ON)@VGS=3V, ID=3A 20A 60mΩ(typ) 59mΩ(typ) 60mΩ(typ) Equivalent Circuit MTN6515J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Sy mbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.