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CYStech Electronics Corp.
Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTN9973J3
BVDSS ID RDSON
60V 14A 80mΩ
Features
• VDS=60V RDS(ON)=80mΩ(max.)@VGS=10V, ID=9A
RDS(ON)=100mΩ(max.)@VGS=4.5V, ID=6A
• Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package
Symbol
MTN9973J3
Outline
TO-252
G：Gate D：Drain S：Source
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current Total Power Dissipation (TC=25℃)
Linear Derating Factor Operating Junction and Storage Temperature Note : *1.
MTN9973J3 Datasheet
