Datasheet4U Logo Datasheet4U.com

MTP2311N3 - -60V P-CHANNEL Enhancement Mode MOSFET

Key Features

  • Low gate charge.
  • Compact and low profile SOT-23 package.
  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V,ID=-1.7A -60V -3.5A 72mΩ(typ) 98mΩ(typ) Symbol MTP2311N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°.

📥 Download Datasheet

Datasheet Details

Part number MTP2311N3
Manufacturer CYStech Electronics
File Size 353.12 KB
Description -60V P-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTP2311N3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTP2301S3 20V P-Channel Enhancement Mode MOSFET CYStech
MTP23N05L Power Field Effect Transistor Motorola
MTP23P06 Power Field Effect Transistor Motorola
MTP23P06V TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM Motorola
MTP23P06V Power MOSFET 23 Amps ON Semiconductor

Other Datasheets by CYStech Electronics

Part Number Description
MTP2311AV8 P-Channel Enhancement Mode MOSFET
MTP2311V8 P-Channel Enhancement Mode MOSFET
MTP2317N3 20V P-CHANNEL Enhancement Mode MOSFET
MTP2301N3 20V P-CHANNEL Enhancement Mode MOSFET
MTP2301V3 -20V P-CHANNEL Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. -60V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C733N3 Issued Date : 2011.12.27 Revised Date : Page No. : 1/8 MTP2311N3 Features • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V,ID=-1.7A -60V -3.