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MTP3J15N3 - 50V P-CHANNEL Enhancement Mode MOSFET

Features

  • Low gate charge.
  • Excellent thermal and electrical capabilities.
  • Pb-free package BVDSS ID RDSON@VGS=-10V, ID=-100mA RDSON@VGS=-5V, ID=-100mA -50V -130mA 4.5Ω(typ) 6Ω(typ) Equivalent Circuit MTP3J15N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Tj=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-5V Pulsed Drain Current (Note 1) Maximum Power Dissipation @ TA=25℃ T.

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Datasheet Details

Part number MTP3J15N3
Manufacturer CYStech Electronics
File Size 346.63 KB
Description 50V P-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTP3J15N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 50V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C465N3 Issued Date : 2009.03.03 Revised Date : 2012.05.18 Page No. : 1/ 8 MTP3J15N3 Features • Low gate charge • Excellent thermal and electrical capabilities • Pb-free package BVDSS ID RDSON@VGS=-10V, ID=-100mA RDSON@VGS=-5V, ID=-100mA -50V -130mA 4.5Ω(typ) 6Ω(typ) Equivalent Circuit MTP3J15N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Tj=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-5V Pulsed Drain Current (Note 1) Maximum Power Dissipation @ TA=25℃ Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purpose, 10 s Operating Junction and Storage Temperature Note : 1.
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