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MTP3J15Y3 - 50V P-CHANNEL Enhancement Mode MOSFET

Features

  • Low gate charge.
  • Excellent thermal and electrical capabilities.
  • Pb-free lead plating and halogen-free package BVDSS ID RDSON@-10V RDSON@-5V RDSON@-4V RDSON@-2.5V -50V -130mA 8Ω (MAX) 10Ω (MAX) 12Ω (MAX) 32Ω (MAX) Equivalent Circuit MTP3J15Y3 Outline SOT-723 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Tj=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-10V Pulsed Drain Current.

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Datasheet Details

Part number MTP3J15Y3
Manufacturer CYStech Electronics
File Size 541.58 KB
Description 50V P-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTP3J15Y3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 50V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C465Y3 Issued Date : 2012.04.13 Revised Date : 2012.05.19 Page No. : 1/ 8 MTP3J15Y3 Features • Low gate charge • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package BVDSS ID RDSON@-10V RDSON@-5V RDSON@-4V RDSON@-2.
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