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MTP3LP01Y3 - 30V P-CHANNEL Enhancement Mode MOSFET

Features

  • Ultra high speed switching.
  • Low gate charge.
  • 2.5V drive.
  • Pb-free package lead plating and halogen-free package. BVDSS ID RDSON(typ) -30V -230mA 3Ω@-4V 4.6Ω@-2.5V 10.9Ω@-1.5V Equivalent Circuit MTP3LP01Y3 Outline SOT-723 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Maximum Power Dissipation (Note 2) Th.

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Datasheet Details

Part number MTP3LP01Y3
Manufacturer CYStech Electronics
File Size 377.71 KB
Description 30V P-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTP3LP01Y3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 30V P-CHANNEL Enhancement Mode MOSFET Spec. No. : 794Y3 Issued Date : 2011.12.22 Revised Date : Page No. : 1/ 8 MTP3LP01Y3 Features • Ultra high speed switching. • Low gate charge. • 2.5V drive. • Pb-free package lead plating and halogen-free package. BVDSS ID RDSON(typ) -30V -230mA 3Ω@-4V 4.6Ω@-2.5V 10.9Ω@-1.5V Equivalent Circuit MTP3LP01Y3 Outline SOT-723 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Maximum Power Dissipation (Note 2) Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Note : 1. Pulse width≤ 10μs, duty cycle≤1%. 2.
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