Datasheet4U Logo Datasheet4U.com

MTP4435BV8 - P-Channel Enhancement Mode Power MOSFET

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating package RDSON@VGS=-5V, ID=-7A -30V -10.5A -32.4A 12.6mΩ(typ. ) 16.9mΩ(typ. ) Equivalent Circuit MTP4435BV8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device Package Shipping MTP4435BV8-0-T6-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS.

📥 Download Datasheet

Datasheet Details

Part number MTP4435BV8
Manufacturer CYStech Electronics
File Size 359.26 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTP4435BV8 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTP40008 Three-Phase Bridge Rectifier nELL
MTP40010 Three-Phase Bridge Rectifier nELL
MTP40012 Three-Phase Bridge Rectifier nELL
MTP40016 Three-Phase Bridge Rectifier nELL
MTP40018 Three-Phase Bridge Rectifier nELL

Other Datasheets by CYStech Electronics

Part Number Description
MTP4435AJ3 P-Channel Enhancement Mode Power MOSFET
MTP4435AQ8 P-Channel Enhancement Mode Power MOSFET
MTP4435AV8 P-Channel Enhancement Mode Power MOSFET
MTP4435Q8 P-Channel Enhancement Mode Power MOSFET
MTP4435V8 P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C107V8 Issued Date : 2016.02.17 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTP4435BV8 BVDSS ID@ VGS=-10V, TA=25°C ID@ VGS=-10V, TC=25°C RDSON@VGS=-10V, ID=-10A Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package RDSON@VGS=-5V, ID=-7A -30V -10.5A -32.4A 12.6mΩ(typ.) 16.9mΩ(typ.
Published: |