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MTP4435Q8 - P-Channel Enhancement Mode Power MOSFET

Description

The MTP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • RDS(ON)=20mΩ@VGS=-10V, ID=-8A RDS(ON)=35mΩ@VGS=-4.5V, ID=-5A.
  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free package Equivalent Circuit MTP4435Q8 Outline SOP-8 G:Gate S:Source D:Drain MTP4435Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage.

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Datasheet Details

Part number MTP4435Q8
Manufacturer CYStech Electronics
File Size 257.42 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTP4435Q8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4435Q8 Spec. No. : C391Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 1/6 Description The MTP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • RDS(ON)=20mΩ@VGS=-10V, ID=-8A RDS(ON)=35mΩ@VGS=-4.
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