BTB818N6
BTB818N6 is PNP Transistor manufactured by CYStech.
Features
- Low VCE(sat), VCE(sat)=-0.2V (typical), at IC / IB =- 400m A /- 20m A
- Pb-free package
Equivalent Circuit
Outline
SOT-23-6L
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO -40 V
Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current Peak Base Current
VCEO VEBO
IC ICM IBM
-30 -7 -1.5 -3
- 1 -500
V V A A m A
Power Dissipation
- 2
Thermal Resistance, Junction to Ambient
RθJA 104 °C/W
Operating Junction and Storage Temperature Range
Note :1 Single pulse, Pw=10ms
Tj;Tstg
-55~+150
°C
2. When mounted on 25mm×25mm×1.6 mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air condition.
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C313N6 Issued Date :...
