BTB826M3
BTB826M3 is PNP Transistor manufactured by CYStech.
Features
- Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A
- Excellent current gain characteristics
- Pb-free lead plating package
Symbol
Outline
SOT-89
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)
Power Dissipation
VCBO VCEO VEBO
IC ICP
Pd
Power Dissipation
Pd
ESD susceptibility
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. Single Pulse , Pw=10ms
2. When mounting on a 40 ×40 ×0.7 mm ceramic board.
3. Human body model, 1.5kΩ in series with 100p F
Limits
Unit
-50
-30
-5
-3
-6 (Note 1)
2 (Note...
