BTB826M3 Description
CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB826M3 Spec. 2003.05.25 Revised Date :2013.08.12 Page No.
BTB826M3 Key Features
- Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A
- Excellent current gain characteristics
- Pb-free lead plating package