BTD2114N3
BTD2114N3 is High Current Gain Medium Power NPN Epitaxial Planar Transistor manufactured by CYStech.
CYStech Electronics Corp.
Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : 2017.12.05 Page No. : 1/8
High Current Gain Medium Power NPN Epitaxial Planar Transistor
AUDIO MUTING APPLICATION
BVCEO IC
20V 500mA
RCE(SAT) 0.32Ω(typ)
Features
- High Emitter-Base voltage, VEBO=12V(min).
- High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA.
- Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA.
- Pb-free and halogen-free package.
Symbol
Outline
SOT-23 C
B：Base C：Collector E：Emitter
Ordering Information
Device BTD2114N3-0-T1-G
Package
Shipping
SOT-23 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly...
