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BTD2114N3 - High Current Gain Medium Power NPN Epitaxial Planar Transistor

Product Overview

CYStech

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BTD2114N3 High Current Gain Medium Power NPN Epitaxial Planar Transistor by CYStech - Datasheet Preview — Datasheet preview – BTD2114N3

Datasheet Details

Part number	BTD2114N3
Manufacturer	CYStech
File Size	355.75 KB
Description	High Current Gain Medium Power NPN Epitaxial Planar Transistor
Datasheet	BTD2114N3 Datasheet
Additional preview pages of the BTD2114N3 datasheet.

Product details

Features

High Emitter-Base voltage, VEBO=12V(min).
High DC current gain, hFE=1200(min. ) @VCE=3V, IC=10mA.
Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA.
Pb-free and halogen-free package. Symbol BTD2114N3 Outline SOT-23 C B：Base C：Collector E：Emitter E B Ordering Information Device BTD2114N3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products,.

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Published: Jan 22, 2020 |