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BTD2114N3 - High Current Gain Medium Power NPN Epitaxial Planar Transistor

Key Features

  • High Emitter-Base voltage, VEBO=12V(min).
  • High DC current gain, hFE=1200(min. ) @VCE=3V, IC=10mA.
  • Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA.
  • Pb-free and halogen-free package. Symbol BTD2114N3 Outline SOT-23 C B：Base C：Collector E：Emitter E B Ordering Information Device BTD2114N3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products,.

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Datasheet Details

Part number BTD2114N3
Manufacturer CYStech
File Size 355.75 KB
Description High Current Gain Medium Power NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2114N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : 2017.12.05 Page No. : 1/8 High Current Gain Medium Power NPN Epitaxial Planar Transistor AUDIO MUTING APPLICATION BTD2114N3 BVCEO IC 20V 500mA RCE(SAT) 0.32Ω(typ) Features • High Emitter-Base voltage, VEBO=12V(min). • High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA. • Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA. • Pb-free and halogen-free package.