BTD2114N3 Description
CYStech Electronics Corp. 2012.01.02 Revised Date : 1/8 High Current Gain Medium Power NPN Epitaxial Planar Transistor AUDIO MUTING APPLICATION BTD2114N3 BVCEO IC 20V 500mA RCE(SAT) 0.32Ω(typ).
BTD2114N3 Key Features
- High Emitter-Base voltage, VEBO=12V(min)
- High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA
- Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA
- Pb-free and halogen-free package