Datasheet4U Logo Datasheet4U.com

BTD2118T3 - Silicon NPN Epitaxial Planar Transistor

General Description

High BVCEO High current capability Pb-free package Symbol BTD2118T3 Outline TO-126 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector C

📥 Download Datasheet

Datasheet Details

Part number BTD2118T3
Manufacturer CYStech
File Size 157.55 KB
Description Silicon NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2118T3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BTD2118J3 NPN Epitaxial Planar Transistor Cystech Electonics
BTD2118LJ3 NPN Epitaxial Planar Transistor Cystech Electonics
BTD2150A3 NPN Epitaxial Planar Transistor Cystech Electonics
BTD2150AD3 NPN Epitaxial Planar Transistor Cystech Electonics
BTD2150AE3 NPN Epitaxial Planar Transistor Cystech Electonics

Other Datasheets by CYStech

Part Number Description
BTD2114N3 High Current Gain Medium Power NPN Epitaxial Planar Transistor
BTD2150FP Low Vcesat NPN Epitaxial Planar Transistor
BTD2150K3 Low Vcesat NPN Epitaxial Planar Transistor
BTD2195SM3 NPN Epitaxial Planar Transistor
BTD2195SN3 NPN Epitaxial Planar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD2118T3 Spec. No. : C847T3 Issued Date : 2007.06.26 Revised Date : Page No. : 1/5 Description • High BVCEO • High current capability • Pb-free package Symbol BTD2118T3 Outline TO-126 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse , Pw≦380μs,Duty≦2%. BTD2118T3 Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 80 30 7 5 8 (Note) 1 15 125 8.