MTA2D0P02H8 Description
CYStech Electronics Corp. 2017.11.21 Revised Date : 1/ 9 P-Channel Enhancement Mode Power MOSFET MTA2D0P02H8 BVDSS ID@VGS=-4.5V, TC=25°C ID@VGS=-4.5V, TA=25°C.
MTA2D0P02H8 Key Features
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Pb-free lead plating and Halogen-free package
- 20V -85.5A -27A 2.0mΩ 2.6mΩ