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MTA2D0P02H8 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package VGS=-4.5V, ID=-20A RDSON(TYP) VGS=-2.5V, ID=-20A -20V -85.5A -27A 2.0mΩ 2.6mΩ Symbol MTA2D0P02H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTA2D0P02H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly g.

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Datasheet Details

Part number MTA2D0P02H8
Manufacturer CYStech
File Size 709.99 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA2D0P02H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C027H8 Issued Date : 2017.11.21 Revised Date : 2018.09.11 Page No. : 1/ 9 P-Channel Enhancement Mode Power MOSFET MTA2D0P02H8 BVDSS ID@VGS=-4.5V, TC=25°C ID@VGS=-4.5V, TA=25°C Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Pb-free lead plating and Halogen-free package VGS=-4.5V, ID=-20A RDSON(TYP) VGS=-2.5V, ID=-20A -20V -85.5A -27A 2.0mΩ 2.