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MTA3D0N01H8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • VGS=2.5V, ID=20A 6.2mΩ.
  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTA3D0N01H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTA3D0N01H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gree.

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Datasheet Details

Part number MTA3D0N01H8
Manufacturer CYStech
File Size 557.80 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA3D0N01H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C098H8 Issued Date : 2016.04.18 Revised Date : 2016.04.27 Page No. : 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET MTA3D0N01H8 BVDSS ID @ TC=25°C, VGS=4.5V 14V 44.5A ID @ TA=25°C, VGS=4.5V 15.4A VGS=10V, ID=20A 2.9mΩ RDSON(TYP) VGS=4.5V, ID=20A 3.7mΩ Features VGS=2.5V, ID=20A 6.