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MTA5D0P01H8 - P-Channel MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package BVDSS ID@VGS=-4.5V, TC=25°C(Silicon limit) ID@VGS=-4.5V, TC=25°C(package limit) ID@VGS=-4.5V, TA=25°C VGS=-4.5V, ID=-20A RDSON(TYP) VGS=-2.5V, ID=-15A -12V -74A -58A -23.4A 4.0mΩ 5.4mΩ Symbol MTA5D0P01H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTA5D0P01H8-0-T6.

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Datasheet Details

Part number MTA5D0P01H8
Manufacturer CYStech
File Size 805.54 KB
Description P-Channel MOSFET
Datasheet download datasheet MTA5D0P01H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C044H8 Issued Date : 2017.07.25 Revised Date : Page No. : 1/ 10 P-Channel Enhancement Mode Power MOSFET MTA5D0P01H8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package BVDSS ID@VGS=-4.5V, TC=25°C(Silicon limit) ID@VGS=-4.5V, TC=25°C(package limit) ID@VGS=-4.5V, TA=25°C VGS=-4.5V, ID=-20A RDSON(TYP) VGS=-2.5V, ID=-15A -12V -74A -58A -23.4A 4.0mΩ 5.