MTB20N04J3 Overview
CYStech Electronics Corp. 2015.01.05 Revised Date : 1/9 N -Channel Enhancement Mode Power MOSFET MTB20N04J3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C.
MTB20N04J3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- Pb-free lead plating package