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MTDN9926Q8 - Dual N-Channel Enhancement Mode Power MOSFET

Description

The MTDN9926Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • RDS(ON)=28mΩ@VGS=4.5V, ID=6A.
  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Capable of 2.5V gate drive.
  • Pb-free lead plating package Equivalent Circuit MTDN9926Q8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTDN9926Q8 Package SOP-8 (Pb-free package) MTDN9926Q8 Shipping 3000 pcs / Tape & Reel Marking 9926SS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C747Q8 Issued.

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Datasheet Details

Part number MTDN9926Q8
Manufacturer CYStech
File Size 383.19 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTDN9926Q8 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C747Q8 Issued Date : 2009.11.09 Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9926Q8 BVDSS ID 20V 6A Description RDSON(MAX) 28mΩ The MTDN9926Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • RDS(ON)=28mΩ@VGS=4.5V, ID=6A • Simple drive requirement • Low on-resistance • Fast switching speed • Capable of 2.
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