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MTEF1P15AN6 - P-Channel Enhancement Mode Power MOSFET

Description

The MTEF1P15AN6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Small package outline.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTEF1P15AN6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Parameter Gate-Source Voltage TC=25 °C Continuous Drain Current TC=70 °C TA=25 °C (Note 1) TA=70 °C (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70 °C TA=25 °C TA=70 °C Operating Junction T.

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Datasheet Details

Part number MTEF1P15AN6
Manufacturer CYStech
File Size 366.91 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTEF1P15AN6 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTEF1P15AN6 Spec. No. : C896N6 Issued Date : 2013.02.21 Revised Date : 2015.04.30 Page No. : 1/9 Description The MTEF1P15AN6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
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