MTE100N10KRH8 - N-Channel Enhancement Mode Power MOSFET

CYStech

Key Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
ESD protected gate.
Pb-free lead plating and Halogen-free package 100V 6.8A 3.0A 102mΩ(typ) Symbol MTE100N10KRH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTE100N10KRH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel.

MTE100N10KRH8 n-channel enhancement mode power mosfet by CYStech - Datasheet Preview

Datasheet Details

Part number	MTE100N10KRH8
Manufacturer	CYStech
File Size	623.76 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE100N10KRH8 Datasheet

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CYStech Electronics Corp. Spec. No. : C059H8 Issued Date : 2017.04.25 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTE100N10KRH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=2A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD protected gate • Pb-free lead plating and Halogen-free package 100V 6.8A 3.