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MTE130N20E3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID @ VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=9A 200V 18A 159 mΩ(typ) Symbol MTE130N20E3 Outline TO-220 G:Gate D:Drain S:Source GDS Ordering Information Device MTE130N20E3-0-UB-X Package TO-220 (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant.

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Datasheet Details

Part number MTE130N20E3
Manufacturer CYStech
File Size 348.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE130N20E3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20E3 Spec. No. : C966E3 Issued Date : 2015.05.06 Revised Date : Page No.