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MTE130N20KF3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • ESD Diode Protected Gate.
  • Fast Switching Characteristic.
  • Pb-free lead plating and RoHS compliant package BVDSS ID RDSON(TYP) @ VGS=10V, ID=9A 200V 18A 143mΩ Equivalent Circuit MTE130N20KF3 Outline TO-263 G:Gate D:Drain S:Source G DS Ordering Information Device MTE130N20KF3-0-T7-S Package Shipping TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly.

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Datasheet Details

Part number MTE130N20KF3
Manufacturer CYStech
File Size 289.87 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE130N20KF3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20KF3 Spec. No. : C952F3 Issued Date : 2014.06.03 Revised Date : Page No.