Datasheet4U Logo Datasheet4U.com

MTE130N20KJ3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • ESD Diode Protected Gate.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package BVDSS ID RDSON(TYP) @ VGS=10V, ID=9A 200V 18A 142mΩ Symbol MTE130N20KJ3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTE130N20KJ3-0-T3-G Package Shipping TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade :.

📥 Download Datasheet

Datasheet Details

Part number MTE130N20KJ3
Manufacturer CYStech
File Size 345.01 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE130N20KJ3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20KJ3 Spec. No. : C952J3 Issued Date : 2014.02.27 Revised Date : 2014.03.05 Page No.