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MTE130N20KE3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • ESD Diode Protected Gate.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID RDSON(TYP) @ VGS=10V, ID=9A 200V 18A 143mΩ Symbol MTE130N20KE3 Outline TO-220 G:Gate D:Drain S:Source GDS Ordering Information Device MTE130N20KE3-0-UB-S Package TO-220 (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G fo.

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Datasheet Details

Part number MTE130N20KE3
Manufacturer CYStech
File Size 307.98 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE130N20KE3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20KE3 Spec. No. : C952E3 Issued Date : 2013.12.27 Revised Date : 2014.03.05 Page No.