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MTN1012C3 - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • Simple drive requirement.
  • Small package outline.
  • Pb-free package 20V 560mA 320mΩ(typ) 510mΩ(typ) 980mΩ(typ) Symbol MTN1012C3 Outline SOT-523 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) Continuous Drain Current @ TA=85°C, VGS=4.5V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation (Note 3) TA=25℃ TA=85℃ ESD suscept.

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Datasheet Details

Part number MTN1012C3
Manufacturer CYStech
File Size 270.86 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN1012C3 Datasheet
Additional preview pages of the MTN1012C3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET MTN1012C3 BVDSS ID RDSON@VGS=4.5V, ID=600mA RDSON@VGS=2.5V,ID=400mA RDSON@VGS=1.8V,ID=350mA Features • Simple drive requirement • Small package outline • Pb-free package 20V 560mA 320mΩ(typ) 510mΩ(typ) 980mΩ(typ) Symbol MTN1012C3 Outline SOT-523 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) Continuous Drain Current @ TA=85°C, VGS=4.
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