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MTN1012ZC3 - N-Channel Enhancement Mode MOSFET

General Description

Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package RDSON(TYP) 340mΩ@2.5V/0.5A 420mΩ@1.8V/0.4A Symbol MTN1012ZC3 Outline SOT-523 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°

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Datasheet Details

Part number MTN1012ZC3
Manufacturer CYStech
File Size 672.79 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN1012ZC3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C588C3 Issued Date : 2011.01.05 Revised Date : Page No. : 1/7 ESD protected N-CHANNEL Enhancement Mode MOSFET MTN1012ZC3 BVDSS 20V ID 0.7A 300mΩ@4.5V/0.6A Description • Low voltage drive, 1.8V • Easy to use in parallel • High speed switching • ESD protected device • Pb-free package RDSON(TYP) 340mΩ@2.5V/0.5A 420mΩ@1.8V/0.4A Symbol MTN1012ZC3 Outline SOT-523 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Total Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : *1.