MTN13N50CFP - N-Channel Enhancement Mode Power MOSFET

CYStech

General Description

The MTN13N50CFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Insulating package, front/back side insulating voltage=2500V(AC).
RoHS compliant package.

📥 Download Datasheet

MTN13N50CFP n-channel enhancement mode power mosfet by CYStech - Datasheet Preview

Datasheet Details

Part number	MTN13N50CFP
Manufacturer	CYStech
File Size	507.84 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTN13N50CFP Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MTN1356	(MTNxxxx) 3&4 DIGIT DISPLAY	Marktech Corporate
MTN1130	SINGLE DIGIT SEVEN SEGMENT DISPLAY	Marktech Corporate
MTN1136	(MTNxxxx) SINGLE DIGIT SEVEN SEGMENT DISPLAY	Marktech Corporate
MTN1139	(MTNxxxx) SINGLE DIGIT SEVEN SEGMENT DISPLAY	Marktech Corporate
MTN1140	(MTNxxxx) SINGLE DIGIT SEVEN SEGMENT DISPLAY	Marktech Corporate

Other Datasheets by CYStech

Part Number	Description
MTN13N50BFP	N-Channel Enhancement Mode Power MOSFET
MTN13N50E3	N-Channel Enhancement Mode Power MOSFET
MTN13N50FP	N-Channel Enhancement Mode Power MOSFET
MTN13N45E3	N-Channel Enhancement Mode Power MOSFET
MTN1308E3	N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

CYStech Electronics Corp. Spec. No. : C117FP Issued Date : 2015.12.27 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN13N50CFP BVDSS 500V ID @VGS=10V, TC=25°C 13A ID @VGS=10V, TC=100°C 8.2A RDS(ON)@VGS=10V, ID=6.5A 0.42Ω(typ) Description The MTN13N50CFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.