MTN13N50E3 - N-Channel Enhancement Mode Power MOSFET

CYStech

General Description

The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

BVDSS=550V typically @ Tj=150℃.
Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package.

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MTN13N50E3 n-channel enhancement mode power mosfet by CYStech - Datasheet Preview

Datasheet Details

Part number	MTN13N50E3
Manufacturer	CYStech
File Size	468.37 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTN13N50E3 Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN13N50E3 Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 1/8 BVDSS : 500V RDS(ON) : 0.48Ω ID : 13A Description The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.