Datasheet4U Logo Datasheet4U.com

2305 - P-Channel MOSFET

Datasheet Summary

Description

The 2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

📥 Download Datasheet

Datasheet preview – 2305

Datasheet Details

Part number 2305
Manufacturer CYT
File Size 119.41 KB
Description P-Channel MOSFET
Datasheet download datasheet 2305 Datasheet
Additional preview pages of the 2305 datasheet.

📁 Similar Datasheet

  • 2305 - 3.3V Zero-Delay Clock Buffer (Renesas)
  • 2305-RC - High Current Toroid Inductors (Bourns)
  • 230-JC6DT3 - DIESEL ENGINE-GENERATOR SET (MTU Onsite Energy)
  • 230-JS6DT3 - DIESEL ENGINE-GENERATOR SET (MTU Onsite Energy)
  • 2300 - 100 pin Strip Header (3M)
  • 2300F - N-Channel MOSFET (GOFORD)
  • 2301 - P-Channel Enhancement Mode Power MOSFET (GFD)
  • 2301 - 18V P-channel enhanced MOSFET (ChipSourceTek)
  • 2301-RC - High Current Toroid Inductors (Bourns)
  • 2301H - N-Channel MOSFET (GOFORD)
Other Datasheets by CYT

    Full PDF Text Transcription

    Click to expand full text
    P Channel Enchancement Mode MOSFET 2305 -3.5A DESCRIPTION The 2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 1.Gate 2.Source 3.Drain 3 S05YA 1 2 S: Subcontractor Y: Year Code A: Process Code SHENZHEN CYT OPTO-ELECTRONIC TECHNOLOGY CO.,LTD. Page 1 www.szcyt.com P Channel Enchancement Mode MOSFET 2305 -3.
    Published: |