• Part: NR6300EZ
  • Description: 30um InGaAs AVALANCHE PHOTO DIODE
  • Category: Diode
  • Manufacturer: California Eastern Labs
  • Size: 246.56 KB
Download NR6300EZ Datasheet PDF
California Eastern Labs
NR6300EZ
NR6300EZ is 30um InGaAs AVALANCHE PHOTO DIODE manufactured by California Eastern Labs.
PHOTO DIODE  30  m In Ga As AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS DESCRIPTION The NR6300EZ is an In Ga As avalanche photo diode, and can be used in OTDR systems. Features - Small dark current - Small terminal capacitance - High sensitivity - High speed response - Detecting area size ID = 5 n A Ct = 0.35 p F @ 0.9 V(BR)R S = 0.94 A/W @ - = 1 310 nm, M = 1 f C = 2.5 GHz MIN. @ - = 1 310 nm, M = 10  30 m Document No. PL10701EJ02V0DS (2nd edition) Date Published January 2010 NS The mark - shows major revised points. The revised points can be easily searched by copying an "- " in the PDF file and specifying it in the "Find what:" field. PACKAGE DIMENSION (UNIT: mm) Data Sheet PL10701EJ02V0DS ORDERING INFORMATION Part Number NR6300EZ-AZ Package 3-pin CAN with ball lens cap Remarks 1. The color of ball lens cap might be observed differently. 2. The hermetic test will be performed as AQL...