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NX5320EH - LASER DIODE

General Description

The NX5320EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD.

4 G fiber channel

Key Features

  • Optical output power.
  • Low threshold current.
  • Differential efficiency.
  • InGaAs monitor PIN-PD.
  • CAN package.
  • Focal point Po = 7.0 mW lth = 8 mA ηd = 0.35 W/A.
  • Wide operating temperature range TC =.
  • 30 to +85°C φ 5.6 mm 5.8 mm Document No. PL10660EJ01V0DS (1st edition) Date Published May 2007 NS CP(N) 2007 NX5320EH.

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Datasheet Details

Part number NX5320EH
Manufacturer California Eastern Labs
File Size 331.27 KB
Description LASER DIODE
Datasheet download datasheet NX5320EH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LASER DIODE NX5320EH 1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX5320EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel FEATURES • Optical output power • Low threshold current • Differential efficiency • InGaAs monitor PIN-PD • CAN package • Focal point Po = 7.0 mW lth = 8 mA ηd = 0.35 W/A • Wide operating temperature range TC = −30 to +85°C φ 5.6 mm 5.8 mm Document No. PL10660EJ01V0DS (1st edition) Date Published May 2007 NS CP(N) 2007 NX5320EH PACKAGE DIMENSIONS (UNIT: mm) φ 5.6+0.00 –0.03 (φ 4.2) *2 *2 (φ 3.55) 1.0±0.1 BOTTOM VIEW 1 2 3 4 110˚±2˚ (0.3) *2 (0.3) *1 φ 2.0 3.87±0.3 2.97±0.2 5.80±0.