NX5323EH
NX5323EH is LASER DIODE manufactured by California Eastern Labs.
LASER DIODE
1 310 nm FOR FTTH PON APPLICATION In Ga As P MQW-FP LASER DIODE
DESCRIPTION
The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with In Ga As monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.
APPLICATION
- FTTH PON (B-PON, G-PON, GE-PON 10 km) system
Features
- Optical output power
- Low threshold current
- Differential Efficiency
- In Ga As monitor PIN-PD
- CAN package
- Focal point Po = 13.0 m W lth = 7 m A
ηd = 0.5 W/A
- Wide operating temperature range TC =
- 40 to +85°C
φ 5.6 mm
6.35 mm
Document No. PL10741EJ01V0DS (1st edition) Date Published July 2009 NS
PACKAGE DIMENSIONS (UNIT: mm)
φ 5.6+0.00
- 0.03
- 2 (φ 4.2) (φ 3.55)- 2
1.0±0.1
(0.4)- 2
BOTTOM VIEW
1 2 3 4
(0.4)
110°±2°
-...
