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NX5323EH - LASER DIODE

Description

The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD.

This device is designed for application up to 1.25 Gb/s.

FTTH PON (B-PON, G-PON, GE-PON 10 km) system

Features

  • Optical output power.
  • Low threshold current.
  • Differential Efficiency.
  • InGaAs monitor PIN-PD.
  • CAN package.
  • Focal point Po = 13.0 mW lth = 7 mA ηd = 0.5 W/A.
  • Wide operating temperature range TC =.
  • 40 to +85°C φ 5.6 mm 6.35 mm Document No. PL10741EJ01V0DS (1st edition) Date Published July 2009 NS 2009 NX5323EH.

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Datasheet Details

Part number NX5323EH
Manufacturer California Eastern Labs
File Size 173.60 KB
Description LASER DIODE
Datasheet download datasheet NX5323EH Datasheet
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LASER DIODE NX5323EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s. APPLICATION • FTTH PON (B-PON, G-PON, GE-PON 10 km) system FEATURES • Optical output power • Low threshold current • Differential Efficiency • InGaAs monitor PIN-PD • CAN package • Focal point Po = 13.0 mW lth = 7 mA ηd = 0.5 W/A • Wide operating temperature range TC = −40 to +85°C φ 5.6 mm 6.35 mm Document No. PL10741EJ01V0DS (1st edition) Date Published July 2009 NS 2009 NX5323EH PACKAGE DIMENSIONS (UNIT: mm) φ 5.6+0.00 –0.03 *2 (φ 4.2) (φ 3.55)*2 1.0±0.1 (0.4)*2 BOTTOM VIEW 1 2 3 4 (0.
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