• Part: NX5330SA
  • Description: LASER DIODE
  • Category: Diode
  • Manufacturer: California Eastern Labs
  • Size: 167.52 KB
Download NX5330SA Datasheet PDF
California Eastern Labs
NX5330SA
NX5330SA is LASER DIODE manufactured by California Eastern Labs.
LASER DIODE 1 310 nm In Ga As P MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode. Reflectometer (OTDR). This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain Features - High output power - Long wavelength PO = 350 m W @ IFP = 1 000 m A- 1 - C = 1 310 nm - 1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1% Document No. PL10699EJ01V0DS (1st edition) Date Published January 2008 NS PACKAGE DIMENSION (UNIT: mm) Data Sheet PL10699EJ01V0DS ORDERING INFORMATION Part Number NX5330SA-AZ- Package 4-pin CAN with flat glass cap - Note Please refer to the last page of this data sheet “pliance with EU Directives” for Pb-Free Ro Hs pliance...