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NX5330SA - LASER DIODE

General Description

The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode.

Reflectometer (OTDR).

Key Features

  • High output power.
  • Long wavelength PO = 350 mW @ IFP = 1 000 mA.
  • 1.
  • C = 1 310 nm.
  • 1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1% Document No. PL10699EJ01V0DS (1st edition) Date Published January 2008 NS NX5330SA.

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Datasheet Details

Part number NX5330SA
Manufacturer California Eastern Labs
File Size 167.52 KB
Description LASER DIODE
Datasheet download datasheet NX5330SA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LASER DIODE NX5330SA 1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode. Reflectometer (OTDR). This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain FEATURES • High output power • Long wavelength PO = 350 mW @ IFP = 1 000 mA*1 C = 1 310 nm *1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1% Document No.