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NX5530SA - LASER DIODE

General Description

The NX5530SA is a 1 550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode.

Reflectometer (OTDR).

Key Features

  • High output power.
  • Long wavelength PO = 250 mW @ IFP = 1 000 mA.
  • 1.
  • C = 1 550 nm.
  • 1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1% Document No. PL10700EJ01V0DS (1st edition) Date Published January 2008 NS NX5530SA.

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Datasheet Details

Part number NX5530SA
Manufacturer California Eastern Labs
File Size 184.26 KB
Description LASER DIODE
Datasheet download datasheet NX5530SA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LASER DIODE NX5530SA 1 550 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5530SA is a 1 550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode. Reflectometer (OTDR). This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain FEATURES • High output power • Long wavelength PO = 250 mW @ IFP = 1 000 mA*1 C = 1 550 nm *1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1% Document No.