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NX6240GP - LASER DIODE

General Description

The NX6240GP is a 1 270 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

10 Gb/s E-PON ONU

Key Features

  • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA ηd = 0.3 W/A TC =.
  • 5 to +85°C φ 5.6 mm 10.2 mm R08DS0057EJ0100 Rev.1.00 Mar 01, 2012 Page 1 of 5 A Business Partner of Renesas Electronics Corporation. NX6240GP Chapter Title.

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Datasheet Details

Part number NX6240GP
Manufacturer California Eastern Labs
File Size 937.49 KB
Description LASER DIODE
Datasheet download datasheet NX6240GP Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A Business Partner of Renesas Electronics Corporation. Preliminary NX6240GP LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION DESCRIPTION The NX6240GP is a 1 270 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. Data Sheet R08DS0057EJ0100 Rev.1.00 Mar 01, 2012 APPLICATIONS • 10 Gb/s E-PON ONU FEATURES • • • • • • • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA ηd = 0.3 W/A TC = −5 to +85°C φ 5.6 mm 10.2 mm R08DS0057EJ0100 Rev.1.00 Mar 01, 2012 Page 1 of 5 A Business Partner of Renesas Electronics Corporation.