Datasheet Summary
A Business Partner of Renesas Electronics Corporation.
Preliminary
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION DESCRIPTION
The NX6240GP is a 1 270 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Data Sheet
R08DS0057EJ0100 Rev.1.00 Mar 01, 2012
APPLICATIONS
- 10 Gb/s E-PON ONU
Features
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- Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA ηd = 0.3 W/A TC =
- 5 to +85°C
φ 5.6 mm 10.2 mm
R08DS0057EJ0100 Rev.1.00 Mar 01, 2012
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A Business...