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NX6240GP - LASER DIODE

Datasheet Summary

Description

The NX6240GP is a 1 270 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

10 Gb/s E-PON ONU

Features

  • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA ηd = 0.3 W/A TC =.
  • 5 to +85°C φ 5.6 mm 10.2 mm R08DS0057EJ0100 Rev.1.00 Mar 01, 2012 Page 1 of 5 A Business Partner of Renesas Electronics Corporation. NX6240GP Chapter Title.

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Datasheet Details

Part number NX6240GP
Manufacturer California Eastern Labs
File Size 937.49 KB
Description LASER DIODE
Datasheet download datasheet NX6240GP Datasheet
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A Business Partner of Renesas Electronics Corporation. Preliminary NX6240GP LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION DESCRIPTION The NX6240GP is a 1 270 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. Data Sheet R08DS0057EJ0100 Rev.1.00 Mar 01, 2012 APPLICATIONS • 10 Gb/s E-PON ONU FEATURES • • • • • • • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA ηd = 0.3 W/A TC = −5 to +85°C φ 5.6 mm 10.2 mm R08DS0057EJ0100 Rev.1.00 Mar 01, 2012 Page 1 of 5 A Business Partner of Renesas Electronics Corporation.
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