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NX6342EP - LASER DIODE

General Description

The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

10 Gb/s BASE-LR/LW (IEEE802.3ae)

Key Features

  • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA ηd = 0.23 W/A TC =.
  • 5 to +85°C φ 5.6 mm 6.0 mm R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 Page 1 of 5 A Business Partner of Renesas Electronics Corporation. NX6342EP Chapter Title.

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Datasheet Details

Part number NX6342EP
Manufacturer California Eastern Labs
File Size 899.28 KB
Description LASER DIODE
Datasheet download datasheet NX6342EP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A Business Partner of Renesas Electronics Corporation. Preliminary NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION DESCRIPTION The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. Data Sheet R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 APPLICATIONS • 10 Gb/s BASE-LR/LW (IEEE802.3ae) FEATURES • • • • • • • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA ηd = 0.23 W/A TC = −5 to +85°C φ 5.6 mm 6.0 mm R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 Page 1 of 5 A Business Partner of Renesas Electronics Corporation.