Datasheet Summary
A Business Partner of Renesas Electronics Corporation.
Preliminary
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION DESCRIPTION
The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Data Sheet
R08DS0050EJ0100 Rev.1.00 Jan 19, 2012
APPLICATIONS
- 10 Gb/s BASE-LR/LW (IEEE802.3ae)
Features
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- Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA ηd = 0.23 W/A TC =
- 5 to +85°C
φ 5.6 mm 6.0 mm
R08DS0050EJ0100 Rev.1.00 Jan 19, 2012
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