3N165
3N165 is Monolithic Dual P-Channel Enhancement Mode MOSFET manufactured by Calogic LLC.
FEATURES
CORPORATION
- Very High Impedance
- High Gate Breakdown
- Low Capacitance
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25o C unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165-
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- - . . . . 40V 3N166-
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- - . . . . 30V Transient Gate-Source Voltage (Note 3)
- - . . . ±125 Gate-Gate Voltage
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- - ±80V Drain Current (Note 2)
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- . 50m A Storage Temperature
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- . . . . -65o C to +200o C Operating Temperature
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- . . -55o C to +150o C Lead Temperature (Soldering, 10sec)
- - . . . +300o C Power Dissipation One Side
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- - . . . 300m W Both Sides
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- - . . 525m W Total Derating above 25o C-
- - . . . 4.2m W/ o C
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
BOTTOM VIEW
TO-99
D2 G2
D1 G1
G2...