LINEAR SYSTEMS 3N165
DUAL P-CHANNEL MOSFET
| Part No. | 3N165 |
|---|---|
| Datasheet | 3N165 Download |
| Manufacturer |  LINEAR SYSTEMS |
| Description | DUAL P-CHANNEL MOSFET |
| Buy | Stock & Price |
FEATURES
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCEABSOLUTE MAXIMUM RATINGS
(NOTE 1) (TA=25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 40 V 3N166 30 V Gate-Gate Voltage ±80 V Drain Current (NOTE 2) 50 mA Storage Temperature -55ºC to +150ºC Operating Temperature -55ºC to +150ºC Lead Temperature (Soldering, 10 sec.) +300ºC Power Dissipation (One Side) 300 mW Total Derating above 25ºC 4.2 mW/ºC LS3N165, LS3N166 3N165, 3N166 SOIC TOP VIEW TO-99 TOP VIEWELECTRICAL CHARACTERISTICS
(TA=25°C and VBS=0 unless otherwise noted) 3N165 & LS3N165 & 3N166 LS3N166 SYMBOL CHARACTERISTIC MIN MAX MIN MAX UNITS CONDITIONS IGSSR IGSSF Gate Reverse Leakage Current Gate Forward Leakage Current IDSS ISDS ID(on) VGS(th) VGS(th) rDS(on) gfs gos Clss Crss Coss RE(Yls) Drain to Source Leakage Current Source to Drain Leakage Current On Drain Current Gate Source Threshold Voltage Gate Source Threshold Voltage Drain Source ON Resistance Forward...