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LS/3N165, LS/3N166
MONOLITHIC DUAL P-CHANNEL
ENHANCEMENT MODE MOSFET
FEATURES
VERY HIGH INPUT IMPEDANCE
HIGH GATE BREAKDOWN
ULTRA LOW LEAKAGE
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
(TA=25°C unless otherwise noted)
Drain-Source or Drain-Gate Voltage (NOTE 2)
3N165
40 V
3N166
30 V
Gate-Gate Voltage
±80 V
Drain Current (NOTE 2)
50 mA
Storage Temperature
-55ºC to +150ºC
Operating Temperature
-55ºC to +150ºC
Lead Temperature (Soldering, 10 sec.)
+300ºC
Power Dissipation (One Side)
300 mW
Total Derating above 25ºC
4.
3N165 Datasheet
