3N165 Datasheet | LINEAR SYSTEMS

FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA=25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 40 V 3N166 30 V Gate-Gate Voltage ±80 V Drain Current (NOTE 2) 50 m A Storage Temperature -55ºC to +150ºC Operating Temperature -55ºC to +150ºC Lead Temperature (Soldering, 10 sec.) +300ºC Power Dissipation (One Side) 300 m W Total Derating above 25ºC 4.2 m W/ºC LS3N165, LS3N166 3N165, 3N166 SOIC TOP VIEW TO-99 TOP VIEW ELECTRICAL CHARACTERISTICS (TA=25°C and VBS=0 unless otherwise noted) 3N165 & LS3N165 & 3N166 LS3N166 SYMBOL CHARACTERISTIC MIN MAX MIN MAX UNITS CONDITIONS IGSSR IGSSF Gate Reverse Leakage Current Gate Forward Leakage Current IDSS ISDS ID(on) VGS(th) VGS(th) r DS(on) gfs gos Clss Crss Coss...