3N166
3N166 is Monolithic Dual P-Channel Enhancement Mode MOSFET manufactured by Calogic LLC.
Features
CORPORATION
- Very High Impedance
- High Gate Breakdown
- Low Capacitance
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25o C unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165-
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- - . . . . 40V 3N166-
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- - . . . . 30V Transient Gate-Source Voltage (Note 3)
- - . . . ±125 Gate-Gate Voltage
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- - ±80V Drain Current (Note 2)
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- . 50m A Storage Temperature
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- . . . . -65o C to +200o C Operating Temperature
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- . . -55o C to +150o C Lead Temperature (Soldering, 10sec)
- - . . . +300o C Power Dissipation One Side
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- - . . . 300m W Both Sides
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