3N166 - DUAL P-CHANNEL MOSFET

LINEAR SYSTEMS

Download the 3N166 datasheet PDF. This datasheet also covers the 3N165 variant, as both devices belong to the same dual p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

VERY HIGH INPUT.

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3N166 dual p-channel mosfet by LINEAR SYSTEMS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (3N165-LINEARSYSTEMS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	3N166
Manufacturer	LINEAR SYSTEMS
File Size	293.38 KB
Description	DUAL P-CHANNEL MOSFET
Datasheet	3N166 Datasheet

📁 Similar Datasheet

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Other Datasheets by LINEAR SYSTEMS

Part Number	Description
3N163	P-CHANNEL ENHANCEMENT MODE MOSFET
3N164	P-CHANNEL ENHANCEMENT MODE MOSFET
3N165	DUAL P-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

LS/3N165, LS/3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA=25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 40 V 3N166 30 V Gate-Gate Voltage ±80 V Drain Current (NOTE 2) 50 mA Storage Temperature -55ºC to +150ºC Operating Temperature -55ºC to +150ºC Lead Temperature (Soldering, 10 sec.) +300ºC Power Dissipation (One Side) 300 mW Total Derating above 25ºC 4.