3N166 Datasheet | LINEAR SYSTEMS

FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA=25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 40 V 30 V Gate-Gate Voltage ±80 V Drain Current (NOTE 2) 50 m A Storage Temperature -55ºC to +150ºC Operating Temperature -55ºC to +150ºC Lead Temperature (Soldering, 10 sec.) +300ºC Power Dissipation (One Side) 300 m W Total Derating above 25ºC 4.2 m W/ºC LS3N165, LS3N166 3N165, 3N166 SOIC TOP VIEW TO-99 TOP VIEW ELECTRICAL CHARACTERISTICS (TA=25°C and VBS=0 unless otherwise noted) 3N165 & LS3N165 & LS3N166 SYMBOL CHARACTERISTIC MIN MAX MIN MAX UNITS CONDITIONS IGSSR IGSSF Gate Reverse Leakage Current Gate Forward Leakage Current IDSS ISDS ID(on) VGS(th) VGS(th) r DS(on) gfs gos Clss Crss Coss RE(Yls) Drain to Source Leakage Current Source to Drain Leakage Current On Drain Current Gate Source Threshold Voltage Gate Source Threshold Voltage Drain Source ON Resistance Forward Transconductance Output Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance mon Source Forward Transconductance...