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Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N190 / 3N191
FEATURES
CORPORATION
• Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 1) 3N190, 3N191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Transient Gate-Source Voltage (Note 1 and 2) . . . . . . . ±125V Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . .