3N190 Datasheet PDF

Micross 3N190

The 3N190 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 LOW GATE LEAKAGE CURRENT IGSS ≤ ± 10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF The hermetically sealed TO-78 package is well suited ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) for high reliability and harsh environment applications. MAX UNITS CONDITIONS BVDSS Drain to Source Breakdown Voltage ‐40 ‐‐ ‐‐ ID = ‐10µA BVSDS Source to Drain Breakdown Voltage ‐40 ‐‐ ‐‐ IS = ‐10µA, VBD = 0V V VGS Gate to Source Voltage ‐3.0 ‐‐ ‐6.5 VDS = ‐15V, ID = ‐500µA VGS(th) Gate to Source Threshold Voltage ‐2.0 ‐‐ ‐5.0 VDS = ‐15V, ID = ‐500µA...