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DATA SHEET
2N2411 2N2412 PNP SILICON TRANSISTOR JEDEC TO-18 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed for high speed switching applications.
MAXIMUM RATINGS: SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance VCBO VCEO VEBO IC PD PD TJ,Tstg ΘJA ΘJC 25 15 5.0 100 0.5 1.2 -65 to +200 350 146
UNITS
V V V mA W W °C °C/W °C/W
ELECTRICAL CHARACTERISTICS: SYMBOL
ICES ICES IEBO BVCBO BVCEO VCE(SAT) VBE(SAT) hFE hFE hFE hFE hfe Cob Cib
TEST CONDITIONS
VCE=15V VCE=15V, TA=150°C VEB=5.0V IC=10µA IC=10mA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=0.
2N2412 Datasheet
